室溫兆赫輻射源的準光學功率合成與被動元件之研究

Abstract

本三年期計畫分為三個主題同時進行研究:室溫兆赫波輻射源、偵測器與光 學元件。我們將製作能操作於兆赫波段的共振穿隧二極體陣列，搭配格狀金屬導 線與共振腔，以準光學的方式將陣列中各元件之輻射功率有效率的合成輸出，實 現操作於室溫之高功率兆赫波輻射源。我們將同時製作Si MOSFET 元件用以實 現操作於室溫之兆赫波偵測器，並測偵測器各項參數，致力於提升偵測器的響應 度。藉由執行本計畫的過程中，我們將擴充實驗室傅式紅外光譜儀的頻譜量測範 圍，用於全波段量測輻射源與偵測器的頻譜特性。此外，將製作操作於兆赫波段 的偏極片與補償片等光學元件，最終用於架設一套適用於兆赫波段的偏光儀量測 系統來分析輻射源之偏振態。

The three-year project contains three different topics including room-temperature terahertz emission sources, detectors, and optical components. We will fabricate terahertz resonant tunneling diodes integrated with metal grid patterns used for biasing and radiation purposes. The integrated units will then be placed inside an external cavity and properly biased for a high output power terahertz source. For terahertz wave detection, we will fabricate Si MOSFET devices and devote ourselves to improving the responsivity of the detectors. In the project, we will expand the measurement capability of our FTIR spectrometer in the spectral range for a full spectrum characterization of the sources and the detectors. We will also manufacture different kinds of optical components such as polarizers and compensators. A terahertz polarimeter will then be built for radiation polarization measurement.