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dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChao, Hsueh-Yungen_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorChiang, Mei-Chaoen_US
dc.contributor.authorKuo, Ting-Chenen_US
dc.contributor.authorMo, Chi-Nengen_US
dc.date.accessioned2014-12-08T15:13:04Z-
dc.date.available2014-12-08T15:13:04Z-
dc.date.issued2007en_US
dc.identifier.isbn978-3-211-72860-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/10078-
dc.identifier.urihttp://dx.doi.org/10.1007/978-3-211-72861-1_55en_US
dc.description.abstractWe employ a three-dimensional (3D) particle-in-cell method coupling with finite-difference time domain scheme to simulate the electron emission in surface conduction electron-emitter displays (SEDs). This computational technique includes the space charge effects automatically. We thus explore the conducting mechanism, the emission efficiency, and the current density distribution on the anode plate with one field emission emitter.en_US
dc.language.isoen_USen_US
dc.titleNumerical simulation of field emission in the surface conduction electron-emitter displayen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1007/978-3-211-72861-1_55en_US
dc.identifier.journalSISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007en_US
dc.citation.spage233en_US
dc.citation.epage236en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000252105600055-
Appears in Collections:Conferences Paper


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