Numerical simulation of field emission in the surface conduction electron-emitter display

doi:10.1007/978-3-211-72861-1_55

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DC 欄位	值	語言
dc.contributor.author	Lo, Hsiang-Yu	en_US
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Chao, Hsueh-Yung	en_US
dc.contributor.author	Tsai, Chih-Hao	en_US
dc.contributor.author	Pan, Fu-Ming	en_US
dc.contributor.author	Chiang, Mei-Chao	en_US
dc.contributor.author	Kuo, Ting-Chen	en_US
dc.contributor.author	Mo, Chi-Neng	en_US
dc.date.accessioned	2014-12-08T15:13:04Z	-
dc.date.available	2014-12-08T15:13:04Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-3-211-72860-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10078	-
dc.identifier.uri	http://dx.doi.org/10.1007/978-3-211-72861-1_55	en_US
dc.description.abstract	We employ a three-dimensional (3D) particle-in-cell method coupling with finite-difference time domain scheme to simulate the electron emission in surface conduction electron-emitter displays (SEDs). This computational technique includes the space charge effects automatically. We thus explore the conducting mechanism, the emission efficiency, and the current density distribution on the anode plate with one field emission emitter.	en_US
dc.language.iso	en_US	en_US
dc.title	Numerical simulation of field emission in the surface conduction electron-emitter display	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1007/978-3-211-72861-1_55	en_US
dc.identifier.journal	SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007	en_US
dc.citation.spage	233	en_US
dc.citation.epage	236	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000252105600055	-
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