标题: 高发光效率之氮化镓二维面射型光子晶体分散回馈式雷射
Study of High Efficiency Gan-Based Two-Dimensional Surface-Emitting Photonic Crystal Distributed-Feedback (2D SEPC DFB) Laser
作者: 卢廷昌
Lu Tien-chang
国立交通大学光电工程学系(所)
关键字: 光子晶体;雷射二极体;三五族半导体;photonic crystal;laser diode;III-V semiconductor
公开日期: 2009
摘要: 本计划主要目的在于开发与研究氮化镓二维面射型光子晶体分散回馈式雷射。将利用本实验室所
发展之现有与研发中之制程技术,包括:垂直微共振腔二极体、发光二极体及a-plane氮化镓的磊晶技
术等方式将光子晶体制作于这些结构上并且达到雷射的操作模式。其中藉由设计不同的孔洞大小与周
期可以使光子晶体反射特殊波长的光谱,因此可以取代DBR,同时减少热效应并且达到磊晶及制程简
化的目的。而非极化(non-polar)Ⅲ-Ⅴ化合物半导体最大的好处在于它能有效消除极化结构存在的内建
电场,有效的降低Quantum Confined Stark Effect (QCSE)并且免除内建电场对能带的影响,因此光子晶
体结构结合此种材料对于未來元件操作效能的提升有很大的潜力。本实验室再利用理論计算及模拟软
体,设计具有下DBR的光子晶体结构。藉由减少共振腔长度及减少下DBR堆叠數,此方法不但可以使
制程与磊晶难度简化,更可以达成单一雷射的光子晶体元件。
The main objective of this project is to develop and study high efficiency GaN-based two-dimensional
surface-emitting photonic crystal distributed-feedback (2D SEPC DFB) lasers. We’ll combine our previous
experience in fabricating GaN-based vertical cavity surface emitting lasers, micro-cavity light emitting
diodes, GaN nanorods, and a-plane GaN epitaxy to tailor and optimize the current injection-type GaN-based
two-dimensional surface-emitting photonic crystal distributed-feedback (2D SEPC DFB) lasers. Especially,
photonic crystal structure, which can reflect the special wavelength we designed, thus can replace the DBR
structures, should reduce the thermal effect, and simplify the epitaxial and fabrication processes. In addition,
using non-polar GaN can reduce the built-in electrical field in the polar structure and reduce Quantum
Confined Stark Effect (QCSE). Photonic crystal structure combined with this material has a great potential
to enhance performance of the future devices. We also calculate and simulate the photonic crystal structure
with bottom DBR by FDTD to design and fabricate the photonic crystal lasers emitting single mode and
simplified the epitaxial and fabrication process by reduced cavity length and less pairs of DBR.
官方说明文件#: NSC97-2221-E009-030-MY2
URI: http://hdl.handle.net/11536/100812
https://www.grb.gov.tw/search/planDetail?id=1759577&docId=300380
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