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dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorTsai, Shu-Tingen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Hang-Ping D.en_US
dc.date.accessioned2014-12-08T15:13:04Z-
dc.date.available2014-12-08T15:13:04Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.L1197en_US
dc.identifier.urihttp://hdl.handle.net/11536/10085-
dc.description.abstractOrganic thin-film transistors (OTFTs) with high transmittance and low photosensitivity have been demonstrated. By using titanium dioxide nanoparticles as the additives in the polymer gate insulators, the level of device photoresponse has been reduced. The device shows simultaneously a high transparence and a minimal threshold voltage shift under white light illumination. It is inferred that the localized energy levels deep in the energy gap of pentacene behave as the recombination centers, enhancing substantially the recombination process in the conducting channel of the OTFFs. Therefore, the electron trapping is relieved and the shift of threshold voltage is reduced upon illumination.en_US
dc.language.isoen_USen_US
dc.subjectorganicen_US
dc.subjecttransistoren_US
dc.subjectphotocurrenten_US
dc.titlePhotocurrent suppression of transparent organic thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.L1197en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume46en_US
dc.citation.issue45-49en_US
dc.citation.spageL1197en_US
dc.citation.epageL1199en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000252043500038-
dc.citation.woscount10-
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