薄氧化層中漏電流與Soft Breakdown特性與機制研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.date.accessioned	2014-12-13T10:47:45Z	-
dc.date.available	2014-12-13T10:47:45Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-031	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101116	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542124&docId=99588	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氧化層漏電流	zh_TW
dc.subject	快閃式記憶體	zh_TW
dc.subject	軟性崩潰	zh_TW
dc.subject	電荷傳導	zh_TW
dc.subject	SILC	en_US
dc.subject	Flash EEPROM	en_US
dc.subject	Soft breakdown	en_US
dc.subject	Charge transport	en_US
dc.title	薄氧化層中漏電流與Soft Breakdown特性與機制研究	zh_TW
dc.title	Stress Induced Leakage Current and Soft Breakdown in Thin Oxides	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫