完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 汪大暉 | en_US |
dc.contributor.author | WANG TAHUI | en_US |
dc.date.accessioned | 2014-12-13T10:47:45Z | - |
dc.date.available | 2014-12-13T10:47:45Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.govdoc | NSC89-2215-E009-031 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/101116 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542124&docId=99588 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 氧化層漏電流 | zh_TW |
dc.subject | 快閃式記憶體 | zh_TW |
dc.subject | 軟性崩潰 | zh_TW |
dc.subject | 電荷傳導 | zh_TW |
dc.subject | SILC | en_US |
dc.subject | Flash EEPROM | en_US |
dc.subject | Soft breakdown | en_US |
dc.subject | Charge transport | en_US |
dc.title | 薄氧化層中漏電流與Soft Breakdown特性與機制研究 | zh_TW |
dc.title | Stress Induced Leakage Current and Soft Breakdown in Thin Oxides | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子工程系 | zh_TW |
顯示於類別: | 研究計畫 |