矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(I)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張俊彥	en_US
dc.contributor.author	CHANG CHUN-YEN	en_US
dc.date.accessioned	2014-12-13T10:48:00Z	-
dc.date.available	2014-12-13T10:48:00Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-070	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101194	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542173&docId=99602	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	鍺化矽	zh_TW
dc.subject	金氧半場效電晶體	zh_TW
dc.subject	電感	zh_TW
dc.subject	射頻	zh_TW
dc.subject	SiGe	en_US
dc.subject	MOSFET	en_US
dc.subject	Inductor	en_US
dc.subject	Radio frequency	en_US
dc.title	矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(I)	zh_TW
dc.title	A Study on SiGe Source/Drain MOSFET and Inductor for RF Applications (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫