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dc.contributor.authorChau, Y.-F.en_US
dc.contributor.authorSun, Y.-S.en_US
dc.contributor.authorTsai, D. P.en_US
dc.contributor.authorYang, T.-J.en_US
dc.date.accessioned2014-12-08T15:13:08Z-
dc.date.available2014-12-08T15:13:08Z-
dc.date.issued2007-11-01en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00339-007-4112-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/10130-
dc.description.abstractThe deformation and plasmon effects of collective localized surface plasmons between incident light and bubble-pit AgOx-type super-RENS structure have been studied using finite-difference time-domain (FDTD) method. We find that the polarization, wavelength of incident light, and particle sizes of Ag nanoparticles are sensitive to the plasma resonance. The Ag nanoparticles inside the bubble-pit AgOx-type super-RENS structure give the additional outer boundaries to the motion of the Ag nanoparticles, and excite more evanescent field which located in the far edge of the bubble from the optical axis of the incident beam. The optical properties between active layer and incident light with polarization direction, different wavelengths, and varied particle sizes of Ag nanoparticles exhibits nonlinear optical behavior in the near field. The far-field signals of different wavelength of incident light confirm the relation between highly localized near-field distributions and enhanced resolution of far-field signals. The subwavelength recording marks smaller than the diffraction limit were distinguishable since the Ag nanoparticles with high localized fields transferred evanescent waves to detectable signals in the far field.en_US
dc.language.isoen_USen_US
dc.titleThe optical properties between an incident wave and the active layer of a bubble-pit AgOx-type super-resolution near-field structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00339-007-4112-8en_US
dc.identifier.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSINGen_US
dc.citation.volume89en_US
dc.citation.issue2en_US
dc.citation.spage381en_US
dc.citation.epage385en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000249016500026-
dc.citation.woscount3-
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