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dc.contributor.authorHsu, Cheng-Hangen_US
dc.contributor.authorChan, Shih-Yuen_US
dc.contributor.authorChen, Chia-Fuen_US
dc.date.accessioned2014-12-08T15:13:09Z-
dc.date.available2014-12-08T15:13:09Z-
dc.date.issued2007-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.7554en_US
dc.identifier.urihttp://hdl.handle.net/11536/10149-
dc.description.abstractIn this paper, we propose a growth mechanism for silicon oxide nanowires (SiONWs) as a unique solid-liquid-solid process. SiONWs were synthesized in a furnace at 1000 degrees C and cooled at a high rate. Nickel and gold were introduced as catalysts to dissolve and precipitate the silicon oxide originally prepared by wet oxidation. The ratio of nickel to gold determined the precipitation rate and different "octopus-like" structures were formed. At a specific cooling rate, composition and amount of a catalyst, aligned silicon oxide nanowires with unattached ends were obtained.en_US
dc.language.isoen_USen_US
dc.subjectsilicon oxideen_US
dc.subjectnanowireen_US
dc.subjectrapid coolingen_US
dc.titleStructural evolution of silicon oxide nanowires via head-growth solid-liquid-solid processen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.7554en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue11en_US
dc.citation.spage7554en_US
dc.citation.epage7557en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000251220000084-
dc.citation.woscount3-
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