完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, Cheng-Hang | en_US |
dc.contributor.author | Chan, Shih-Yu | en_US |
dc.contributor.author | Chen, Chia-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:13:09Z | - |
dc.date.available | 2014-12-08T15:13:09Z | - |
dc.date.issued | 2007-11-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.7554 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10149 | - |
dc.description.abstract | In this paper, we propose a growth mechanism for silicon oxide nanowires (SiONWs) as a unique solid-liquid-solid process. SiONWs were synthesized in a furnace at 1000 degrees C and cooled at a high rate. Nickel and gold were introduced as catalysts to dissolve and precipitate the silicon oxide originally prepared by wet oxidation. The ratio of nickel to gold determined the precipitation rate and different "octopus-like" structures were formed. At a specific cooling rate, composition and amount of a catalyst, aligned silicon oxide nanowires with unattached ends were obtained. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | silicon oxide | en_US |
dc.subject | nanowire | en_US |
dc.subject | rapid cooling | en_US |
dc.title | Structural evolution of silicon oxide nanowires via head-growth solid-liquid-solid process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.46.7554 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 7554 | en_US |
dc.citation.epage | 7557 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000251220000084 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |