完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 簡昭欣 | en_US |
| dc.contributor.author | Chien Chao-Hsin | en_US |
| dc.date.accessioned | 2014-12-13T10:49:41Z | - |
| dc.date.available | 2014-12-13T10:49:41Z | - |
| dc.date.issued | 2009 | en_US |
| dc.identifier.govdoc | NSC98-2221-E009-173-MY3 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/101752 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1902985&docId=315300 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 磊晶高品質鍺與砷化銦鎵異質通道於矽基板之高速金氧半場效電晶體 | zh_TW |
| dc.title | High-Speed MOSFET with High-Quality Ge and Ingaas Epitaxial Hetero-Channels on Si Substrates | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
| 顯示於類別： | 研究計畫 | |
