1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorHu, Chen-Mingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorLin, Chi-Chingen_US
dc.date.accessioned2014-12-08T15:13:10Z-
dc.date.available2014-12-08T15:13:10Z-
dc.date.issued2007-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.907267en_US
dc.identifier.urihttp://hdl.handle.net/11536/10175-
dc.description.abstractNi-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.en_US
dc.language.isoen_USen_US
dc.subjectgetteringen_US
dc.subjectNi-metal-induced lateral crystallization (NILC)en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleImproving the electrical properties of NILC poly-Si films using a gettering substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.907267en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue11en_US
dc.citation.spage1000en_US
dc.citation.epage1003en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000250524200021-
dc.citation.woscount17-
Appears in Collections:Articles


Files in This Item:

  1. 000250524200021.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...