Improving the electrical properties of NILC poly-Si films using a gettering substrate

doi:10.1109/LED.2007.907267

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DC 欄位	值	語言
dc.contributor.author	Hu, Chen-Ming	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Lin, Chi-Ching	en_US
dc.date.accessioned	2014-12-08T15:13:10Z	-
dc.date.available	2014-12-08T15:13:10Z	-
dc.date.issued	2007-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.907267	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10175	-
dc.description.abstract	Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.	en_US
dc.language.iso	en_US	en_US
dc.subject	gettering	en_US
dc.subject	Ni-metal-induced lateral crystallization (NILC)	en_US
dc.subject	thin-film transistors (TFTs)	en_US
dc.title	Improving the electrical properties of NILC poly-Si films using a gettering substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.907267	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1000	en_US
dc.citation.epage	1003	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000250524200021	-
dc.citation.woscount	17	-
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