完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Chun-Chien | en_US |
dc.contributor.author | Wei, Kai-Fang | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Chen, Hsu-Hsin | en_US |
dc.contributor.author | Wang, Jyh-Liang | en_US |
dc.contributor.author | Lee, I-Che | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:13:11Z | - |
dc.date.available | 2014-12-08T15:13:11Z | - |
dc.date.issued | 2007-11-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.908473 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10176 | - |
dc.description.abstract | In this letter, high-performance low-temperature polysilicon thin-film transistors (TFTs) with double-gate (DG) structure and controlled lateral grain growth have been demonstrated by excimer laser crystallization. Via a proper excimer laser condition, along with the a-Si step height beside the bottom gate, a superlateral growth of Si was formed in the channel length plateau. Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics, as compared with the conventional top-gate ones. The proposed DG TFTs (W/L = 1/1 mu m) had the field-effect mobility exceeding 550 cm(2)/V . s, an ON/OFF current ratio that is higher than 10(8), superior short-channel characteristics, and higher current drivability. In addition, the device-to-device uniformity could be improved since grain growth could be artificially controlled by the spatial plateau structure. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | double gate (DG) | en_US |
dc.subject | excimer laser crystallization | en_US |
dc.subject | (ELC) | en_US |
dc.subject | lateral grain growth | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | High-performance short-channel double-gate low-temperature polysilicon thin-film transistors using excimer laser crystallization | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2007.908473 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 28 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 1010 | en_US |
dc.citation.epage | 1013 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000250524200024 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |