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dc.contributor.author霍斯科en_US
dc.contributor.authorVoskoboynikov Oleksaen_US
dc.date.accessioned2014-12-13T10:49:45Z-
dc.date.available2014-12-13T10:49:45Z-
dc.date.issued2014en_US
dc.identifier.govdocNSC102-2112-M009-004-MY2zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/101796-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=8108025&docId=428984en_US
dc.description.sponsorship科技部zh_TW
dc.language.isozh_TWen_US
dc.title半導體奈米體中的自旋軌道偶和及等效Lande因子zh_TW
dc.titleSpin-Orbit Coupling and Effective Lande Factors in Semiconductor Nano-Objects of Complex Geometry and Material Contenten_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
顯示於類別:研究計畫