相同劑量下45奈米節點微影全程禁止間距及圖罩偏差增大因子之改善與相關薄膜研製

Abstract

本計畫之目的為模擬探討45 奈米節點，相同照射（曝光）劑量條件下，對全程連 續間距（間距90 至500 奈米）消除禁止間距、降低圖罩偏差增大因子，並研製相關薄 膜。 本計畫構想重點分二部分： 一、模擬探討限定全程間距使用相同照射（曝光）劑量，以符合晶圓廠實際操作條 件；又擬使用應用較廣、線路幾無限制之減光型相移圖罩，而不用交互型（雷文生型） 相移圖罩，故較具實際應用價值。擬使用全條減光散條，透射率>0、對基材相對相位差 >0，散條寬度可較大，實際製備較易；傳統遮光鉻膜散條，透射率=0、對基材相對相位 差=0，寬度受限，製備不易。另外，45 奈米接觸孔，本計畫擬使用申請人實驗室改良 之透射率控制圖罩進行模擬，此為他處所無。模擬探討將優先以正規化成像對數斜率為 指標，並輔以田口實驗設計法。 二、根據模擬探討結果，實作適用於全條減光散條與改良透射率控制圖罩之嵌附層 薄膜。受限於設備因素，無法實作45 奈米節點圖罩（光罩）上散條與透射率控制圖罩。 本計畫對改善45奈米節點之禁止間距與圖罩偏差增大因子二大棘手議題有所助 益，有助於消除減光型相移圖罩圖案設計之間距限制，相關薄膜並另有其他廣泛用途。 本計畫亦為下世代32奈米線幅技術節點之前瞻性研究，且兼顧學術性、應用性與研究生 培訓。

The goal of this proposal is simulation studies on the improvement of full pitch range of forbidden pitch (FP) and mask error enhancement factor (MEEF) for 45 nm node lithography under same dose and the fabrication of related thin films. The investigation items of this proposal have two major parts. Part I: The same dose will be applied to the full pitch range to meet the real operation conditions of a wafer fab. The Att-PSM will be used instead of Alt-PSM (Levenson Type) for the reason of nearly unlimited pattern design, hence, the application is more valuable. The attenuated scattering bar (ASB) which has transmittance T%>0 and relative phase change to substrate will be used, the width of ASB could be wider, therefore, the making of ASB will be easier. The conventional chromium scattering bar is opaque, with T%=0 and since limited by the width, fabrication is not easy. Besides, for 45 nm contact hole, transmittance control mask (TCM) modified by proposal applicant’s lab will be applied and it is unique. The priority will be given to NILS (Normalized Image Log-Slope) as an index, assisted with Taguchi Design of Experiment in this simulation studies. Part II: The fabrication of embedded thin films which are suitable to be used for both ASB and TCM. Due to the reason of lack of required facilities, the real making of ASB and TCM will not be processed. This proposal is helpful to the improvement of two tough issues at 45 nm node which are forbidden pitch and mask error enhancement factor, is helpful to eliminate the limitation of pitch design for Att-PSM, related thin films also have other wider applications. This proposal is also the advanced study on 32 nm technology node of next generation, furthermore, the academic value, applications and graduate student training have been considered.