半導體量子點之成長與物性分析

Abstract

本計畫將以三年的時間，研究半導體量子點之成長與物性分析，共分為四個研究子題，探討（1）稀磁性半導體奈米結構隨壓力變化之光電特性；（2）二六族稀磁性量子環的製作與磁光特性分析；（3）氮化銦薄膜與量子點製作與光電特性分析；（4）單量子點奈米偵側器研究。 （1） 利用低溫高壓的技術，搭配拉曼光譜、光激螢光頻譜、時間解析光譜和磁光頻譜的研究來探討稀磁性半導體奈米結構隨壓力變化之光電特性。 （2） 利用分子束磊晶技術成長穩定的以及不穩定的硒化(錳)鎘/硒化鋅量子點結構，研究部份覆蓋層造成量子點結構變化之動力學機制。並進一步製作硒化(錳)鎘/硒化鋅量子環結構。在外加磁場下進行各種光譜實驗，研究磁場變化下稀磁性量子環光性的改變。 （3） 藉由週期性流量調製磊晶法製作低載子濃度的氮化銦薄膜，並進一步探究氮化銦奈米粒子的成長動力學。 （4） 利用有機和無機的材料作量子點的表面改質來改善量子點的螢光性質，進而減少螢光閃爍的現像。藉由觀察量子點螢光強度及時間常數隨著螢光共振能量轉移的交亙作用的變化，實際評估是否單一量子點和金奈米粒子或不同波長的量子點對可以當理想的奈米級偵側器？

In this three-year proposal, growth and physical properties of semiconductor quantum dots (QDs) will be investigated. It is divided in four parts, including (1) pressure dependence of optical properties for diluted magnetic semiconductor (DMS) nano-structures; (2) growth and optical properties for II-VI DMS quantum rings (QRs); (3) growth and opto-electronic properties for InN thin-film and QDs; (4) study of nano-sensor. (1) Pressure dependent opto-electronic properties of the DMS nano-structures are investigated using low-temperature-high-pressure technique, Raman scattering, photoluminescence, time-resolved photoluminescence and magnet-optical spectroscopy measurements. (2) Growth of Cd(Mn)Se/ZnSe QDs in Stranski-Krastanow (SK) mode and ripening mode using molecular beam epitaxy to investigate the growth dynamics of the QDs formation by partial capping. Accordingly, Cd(Mn)Se/ZnSe QRs is formed to study the magnetic-optical properties in extra-magnetic field. (3) The study of the growth dynamics of InN QDs by flow rate modulation epitaxy (FME) technique. (4) Finally, we would like to improve the fluorescence intensity of single Colloidal QDs and suppress the blinking phenomena by modifying the surface of QDs with different organic and inorganic capping layers. Subsequently, we will estimate whether single QDs-gold nanoparticle pair or couple QDs with different emission colors are good nano-sensor through monitoring fluorescence intensity and lifetime by means of the fluorescence resonance energy transfer interaction.