完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Kao-Chao | en_US |
dc.contributor.author | Juan, Chuan-Ping | en_US |
dc.contributor.author | Lai, Rui-Ling | en_US |
dc.contributor.author | Chen, Hsia-Wei | en_US |
dc.contributor.author | Syu, Yu-Ying | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:13:13Z | - |
dc.date.available | 2014-12-08T15:13:13Z | - |
dc.date.issued | 2007-11-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.7446 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10206 | - |
dc.description.abstract | A novel quasi-planar thin-film field emitter is fabricated by thin-film deposition and wet etching processes. The spacing between the emitters and collectors could be well controlled on the basis of the thicknesses of Cr thin films, which create submicron gaps. A forming process increases emitter surface roughness and results in a higher field enhancement factor, which shows better field emission characteristics. The turn-on voltage (at which the current level is 100 nA) of the device with a Cr thin film thickness of 300 nm is as low as 12 V, and the current fluctuation in I hour test at a driving voltage of 20 V represents a variation from -86 to +114%. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Cr thin film | en_US |
dc.subject | quasi-planar field emission diode | en_US |
dc.subject | forming process | en_US |
dc.subject | low turn-on voltage | en_US |
dc.title | A quasi-planar thin film field emission diode | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.46.7446 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 7446 | en_US |
dc.citation.epage | 7449 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000251220000060 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |