Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu, Wc. | en_US |
dc.contributor.author | Hsu, L. H. | en_US |
dc.contributor.author | Chang, E. Y. | en_US |
dc.contributor.author | Starski, J. P. | en_US |
dc.contributor.author | Zirath, H. | en_US |
dc.date.accessioned | 2014-12-08T15:13:14Z | - |
dc.date.available | 2014-12-08T15:13:14Z | - |
dc.date.issued | 2007-10-25 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el:20072083 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10219 | - |
dc.description.abstract | The RF-via interconnect structure front the 0- to the 1-level package for coplanar RF-MEMS devices packaging is evaluated. The 0/1-level interconnect structure was designed and optimised using the electromagnetic simulation tool. The structure was then successfully fabricated and characterised up to 67 GHz. The measured and simulated results show good agreement, demonstrating DC-to-60 GHz broadband interconnect performance through the two levels package with return loss below 15 dB and insertion loss within 0.6 dB. | en_US |
dc.language.iso | en_US | en_US |
dc.title | 60GHz broadband 0/1-level RF-via interconnect for RF-MEMS packaging | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el:20072083 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 43 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.spage | 1203 | en_US |
dc.citation.epage | 1205 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000252499100024 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |