完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Wc.en_US
dc.contributor.authorHsu, L. H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorStarski, J. P.en_US
dc.contributor.authorZirath, H.en_US
dc.date.accessioned2014-12-08T15:13:14Z-
dc.date.available2014-12-08T15:13:14Z-
dc.date.issued2007-10-25en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20072083en_US
dc.identifier.urihttp://hdl.handle.net/11536/10219-
dc.description.abstractThe RF-via interconnect structure front the 0- to the 1-level package for coplanar RF-MEMS devices packaging is evaluated. The 0/1-level interconnect structure was designed and optimised using the electromagnetic simulation tool. The structure was then successfully fabricated and characterised up to 67 GHz. The measured and simulated results show good agreement, demonstrating DC-to-60 GHz broadband interconnect performance through the two levels package with return loss below 15 dB and insertion loss within 0.6 dB.en_US
dc.language.isoen_USen_US
dc.title60GHz broadband 0/1-level RF-via interconnect for RF-MEMS packagingen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20072083en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume43en_US
dc.citation.issue22en_US
dc.citation.spage1203en_US
dc.citation.epage1205en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000252499100024-
dc.citation.woscount0-
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