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dc.contributor.authorAhn, H.en_US
dc.contributor.authorKu, Y.-P.en_US
dc.contributor.authorWang, Y.-C.en_US
dc.contributor.authorChuang, C.-H.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:13:15Z-
dc.date.available2014-12-08T15:13:15Z-
dc.date.issued2007-10-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2800292en_US
dc.identifier.urihttp://hdl.handle.net/11536/10230-
dc.description.abstractTerahertz time-domain spectroscopy has been used to investigate terahertz conductivity and dielectric response of indium nitride (InN) nanorod array and epitaxial film. The complex terahertz conductivity of InN film is well fitted by the Drude model, while the negative imaginary conductivity of the InN nanorods can be described by using the Drude-Smith model. The electron mobility of the InN film is 1217 +/- 58 cm(2)/V s, while that of the InN nanorods is 80 +/- 5 cm(2)/V s. The reduced mobility of carriers for the latter can be attributed to the restricted carrier transport within the nanorods. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleTerahertz spectroscopic study of vertically aligned InN nanorodsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2800292en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue16en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000250295700070-
dc.citation.woscount26-
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