标题: | 奈米接面系统的简并电子与磁自旋电子的输运性质 Spin Polarized Transport and Spin Unpolarized Transport in Nano Junctions |
作者: | 陈煜璋 Chen Yu-Chang 国立交通大学电子物理学系(所) |
公开日期: | 2008 |
摘要: | 本研究计画为三年期的计画。计画内容区分为兩部分:第一部分是分子电子学的 研究。以我们过去所发展关于分子电子学第一原理计算与多体理論作为研究基础,继续 探讨奈米接面系统的电子传输性质,如闸极效应、local heating, shot noise, inelastic current, current induced force 等多体效应,并进一步研究分子电晶体的可行性与机制。第二部分 是分子自旋电子学的研究。我们计画将我们目前分子自旋简并系统的理論和计算,推广 到分子磁自旋系统的理論和计算。我们计画将分子系统的金属电极以磁性金属电极取 代,并且考虑原子的自旋轨道偶合效应。由于此系统的尺度微小,所以电子自旋容易保 存,加上电子隧穿特性的影响,此系统的TMR (tunneling magnetoresistance)效应预期会 很显着,这也是我们投入分子系统的自旋电子输运理論研究的原因。我们预期此系统是 有潜力应用于奈米级磁自旋电子元件的制作,例如spin field effect transistor(SFET)等自 旋电子元件等。我们计画以密度泛函理論(DFT)计算方式,计算分子电子自旋系统的接 面性质,研究电子磁自旋的输运性质并探讨此新颖系统的多体物理现象。我们将探讨磁 自旋分子元件的物理机制与材料特性,朝着分子磁自旋电子元件设计的方向努力。奈米 接面系统的电子磁自旋输运性质,这是一个非常新颖的研究領域,需要开发新的理論与 程式,是非常有趣且具挑战性的研究工作。 In this 3-year project, we propose to study the transport properties in nano scale junctions. This project can be casted into two categories: spin-unpolarized transport and spin-polarized transport. For spin degenerate case we plan to continue our previous works on the transport properties in nano scale junctions. We will investigate the properties of electron transport in atomic/molecular bimetal junction, including the effect of gate field and many-body effects occurred in this system. We will study the fundamental physical phenomena happened in nano junction, such as effects of local heating, inelastic current, shot noise, and current induced force. All these basic research can contribute to understand the fundamental physics in nanojunction and directed towards the design of new form of electronics devices based on atom/molecule system. In addition, we will extend our research to the transport properties of spin-polarized electrons in nano scale junction. We propose to develop new theories and new codes in the framework of density functional theory to study possible molecular spintronics devices.” Molecular spintronics” is a brand new field and we expect that it is the way for us to stay in the frontier researches. We plan to investigate the role of spin electrons played in the molecular junction. For example, we plan to replace the metal eletrodes by ferromagnets and study tunneling magnetoresistans (TMR). Due to the nature of tunneling and small size of this system, spin is easy to preserve and large magnetoresitance can be anticipated. As a result, molecular system may be a good candidate for spin field effect transistor (SFET). In the long run, we will devote to probe the possibility of new form of spin electronic devices at atomic/molecule scale based on our researches. |
官方说明文件#: | NSC97-2112-M009-011-MY3 |
URI: | http://hdl.handle.net/11536/102354 https://www.grb.gov.tw/search/planDetail?id=1669673&docId=286946 |
显示于类别: | Research Plans |