标题: | Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix |
作者: | Peng, Yu-Yun Hsieh, Tsung-Eong Hsu, Chia-Hung 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 7-十月-2007 |
摘要: | The dielectric confinement effect on the blue shift Delta E-g(a) of the ZnO quantum dots (QDs) embedded in the SiO2 matrix is evaluated by applying a multi-shell two-electron system model. The experimental measurement and the calculations of various dielectric structures indicate that the composite matrix structure provides a better estimation of the blue shift of the ZnO QDs-SiO2 system than the multi-shell structure. The proportionality factor x defined in this work exhibits a dependence of the dielectric confinement energy on the specific dimension ratio (the b/a ratio) and the dielectric constant epsilon(matrix) of the outer matrix. The result of the calculation also shows the limit of the two-electron system in estimating the ground-state energy of samples with high dot density. However, the correlation shows the existence of the strong dielectric confinement effect in ZnO QDs-SiO2 thin films and allows a better understanding of the semiconductor QDs-dielectric systems. |
URI: | http://dx.doi.org/10.1088/0022-3727/40/19/046 http://hdl.handle.net/11536/10243 |
ISSN: | 0022-3727 |
DOI: | 10.1088/0022-3727/40/19/046 |
期刊: | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
Volume: | 40 |
Issue: | 19 |
起始页: | 6071 |
结束页: | 6075 |
显示于类别: | Articles |
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