标题: Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix
作者: Peng, Yu-Yun
Hsieh, Tsung-Eong
Hsu, Chia-Hung
材料科学与工程学系
Department of Materials Science and Engineering
公开日期: 7-十月-2007
摘要: The dielectric confinement effect on the blue shift Delta E-g(a) of the ZnO quantum dots (QDs) embedded in the SiO2 matrix is evaluated by applying a multi-shell two-electron system model. The experimental measurement and the calculations of various dielectric structures indicate that the composite matrix structure provides a better estimation of the blue shift of the ZnO QDs-SiO2 system than the multi-shell structure. The proportionality factor x defined in this work exhibits a dependence of the dielectric confinement energy on the specific dimension ratio (the b/a ratio) and the dielectric constant epsilon(matrix) of the outer matrix. The result of the calculation also shows the limit of the two-electron system in estimating the ground-state energy of samples with high dot density. However, the correlation shows the existence of the strong dielectric confinement effect in ZnO QDs-SiO2 thin films and allows a better understanding of the semiconductor QDs-dielectric systems.
URI: http://dx.doi.org/10.1088/0022-3727/40/19/046
http://hdl.handle.net/11536/10243
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/19/046
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 40
Issue: 19
起始页: 6071
结束页: 6075
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