標題: Optimal design of integrally gated CNT field-emission devices using a genetic algorithm
作者: Chen, P. Y.
Chen, C. H.
Wu, J. S.
Wen, H. C.
Wang, W. P.
機械工程學系
資訊工程學系
Department of Mechanical Engineering
Department of Computer Science
公開日期: 3-Oct-2007
摘要: A method to optimize the focusing quality of integrally gated CNT field- emission ( FE) devices by combining field- emission modeling and a computational intelligence technique, genetic algorithm ( GA), is proposed and demonstrated. In this work, the e- beam shape, as a characteristic parameter of electron- optical properties, is calculated by field- emission simulation modeling. Using a design tool that combines GA and physical modeling, a set of structural and electrical parameters for four FE device groups, including double- gate, triple- gate, quadruple- gate and quintuple- gate type, were optimized. The resultant FE devices exhibit satisfactory e- beam focusabilities and the extracted parameters with the best performance for each type of FE device were represented to be fabricated by a VLSI technique. The GA- based automatic design parameter extraction will significantly benefit the design of integrated electron- optical systems for versatile vacuum micro- and nano-electronic applications.
URI: http://dx.doi.org/10.1088/0957-4484/18/39/395203
http://hdl.handle.net/11536/10246
ISSN: 0957-4484
DOI: 10.1088/0957-4484/18/39/395203
期刊: NANOTECHNOLOGY
Volume: 18
Issue: 39
結束頁: 
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