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dc.contributor.authorChen, K. Y.en_US
dc.contributor.authorChu, C. S.en_US
dc.contributor.authorMal'shukov, A. G.en_US
dc.date.accessioned2019-04-03T06:40:40Z-
dc.date.available2019-04-03T06:40:40Z-
dc.date.issued2007-10-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.76.153304en_US
dc.identifier.urihttp://hdl.handle.net/11536/10253-
dc.description.abstractSpin-orbit interaction (SOI) arising from in-plane potential gradient is invoked for the generation of spin accumulation in a driven electric field. The SOI and a local in-plane potential pattern together bring about resonant spin dependent scatterings to electrons in a nonequilibrium distribution. In the vicinity of a ring-shaped potential barrier pattern, a spin dipole distribution with a resonant dipole strength characteristic is obtained. As the chemical potential mu is increased across one such resonant energy, the dipole strength manifests both sign reversal and large amplitude enhancement. The scattering resonance, thus, provides an additional knob for the manipulation of the spin accumulation.en_US
dc.language.isoen_USen_US
dc.titleResonant spin dipole induced by an in-plane potential gradient spin-orbit interactionen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.76.153304en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume76en_US
dc.citation.issue15en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000250620400012en_US
dc.citation.woscount2en_US
Appears in Collections:Articles


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