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dc.contributor.authorAhn, H.en_US
dc.contributor.authorKu, Y.-P.en_US
dc.contributor.authorWang, Y.-C.en_US
dc.contributor.authorChuang, C.-H.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:13:20Z-
dc.date.available2014-12-08T15:13:20Z-
dc.date.issued2007-09-24en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2789183en_US
dc.identifier.urihttp://hdl.handle.net/11536/10316-
dc.description.abstractTerahertz emission from indium nitride (InN) nanorods and InN film grown by molecular-beam epitaxy on Si(111) substrates has been investigated. Terahertz emission from InN nanorods is at least three times more intense than that from InN film and depends strongly on the size distribution of the nanorods. Surface electron accumulation at the InN nanorods effectively screens out the photo-Dember field in the accumulation layer formed under the surface. The nanorods with considerably large diameter than the thickness of accumulation layer are found to be dominant in the emission of terahertz radiation from InN nanorod arrays. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleTerahertz emission from vertically aligned InN nanorod arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2789183en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000249787000042-
dc.citation.woscount34-
Appears in Collections:Articles


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