Terahertz emission from vertically aligned InN nanorod arrays

doi:10.1063/1.2789183

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ahn, H.	en_US
dc.contributor.author	Ku, Y.-P.	en_US
dc.contributor.author	Wang, Y.-C.	en_US
dc.contributor.author	Chuang, C.-H.	en_US
dc.contributor.author	Gwo, S.	en_US
dc.contributor.author	Pan, Ci-Ling	en_US
dc.date.accessioned	2014-12-08T15:13:20Z	-
dc.date.available	2014-12-08T15:13:20Z	-
dc.date.issued	2007-09-24	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2789183	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10316	-
dc.description.abstract	Terahertz emission from indium nitride (InN) nanorods and InN film grown by molecular-beam epitaxy on Si(111) substrates has been investigated. Terahertz emission from InN nanorods is at least three times more intense than that from InN film and depends strongly on the size distribution of the nanorods. Surface electron accumulation at the InN nanorods effectively screens out the photo-Dember field in the accumulation layer formed under the surface. The nanorods with considerably large diameter than the thickness of accumulation layer are found to be dominant in the emission of terahertz radiation from InN nanorod arrays. (c) 2007 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Terahertz emission from vertically aligned InN nanorod arrays	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2789183	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	91	en_US
dc.citation.issue	13	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000249787000042	-
dc.citation.woscount	34	-
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