Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張立 | en_US |
| dc.contributor.author | 何焱騰 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:49Z | - |
| dc.date.available | 2014-12-16T06:11:49Z | - |
| dc.date.issued | 2013-09-16 | en_US |
| dc.identifier.govdoc | C30B025/02 | zh_TW |
| dc.identifier.govdoc | C30B029/16 | zh_TW |
| dc.identifier.govdoc | C30B029/40 | zh_TW |
| dc.identifier.govdoc | H01L021/18 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103210 | - |
| dc.description.abstract | 本發明係有關於一種成長纖鋅礦結構之新穎非極性()面磊晶層之方法，其包括：提供一具有鈣鈦礦(Perovskite)之單晶氧化物；選擇該單晶氧化物的一平面作為一基板；在該基板上以氣相沉積法生長一具有纖鋅礦結構半導體之非極性()面磊晶層。本發明亦提供一種以前述方法成長之非極性()晶面之磊晶層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 纖鋅礦結構材料之非極性晶面 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201337050 | zh_TW |
| Appears in Collections: | Patents | |
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