Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 盧廷昌 | en_US |
| dc.contributor.author | 黃煇閔 | en_US |
| dc.contributor.author | 郭浩中 | en_US |
| dc.contributor.author | 王興宗 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:52Z | - |
| dc.date.available | 2014-12-16T06:11:52Z | - |
| dc.date.issued | 2013-06-16 | en_US |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.govdoc | H01L033/10 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103257 | - |
| dc.description.abstract | 一種在半導體光電元件中製作空氣介質層的方法,其步驟包含:提供一基板;在基板上形成氮化鎵薄膜;在氮化鎵薄膜上形成犧牲層;犧牲層上形成含氮化合物半導體層;將具有犧牲層之半導體光電元件之半成品浸泡在酸性溶液中以移除部份之犧牲層而在氮化鎵薄膜及含氮化合物半導體層之間殘留之犧牲層與四周之空間形成一空氣介質層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有空氣介質層之半導體光電元件及空氣介質層之製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201324838 | zh_TW |
| Appears in Collections: | Patents | |
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