Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 李威儀 | en_US |
dc.contributor.author | 葉彥顯 | en_US |
dc.contributor.author | 吳尹豪 | en_US |
dc.contributor.author | 余諮宜 | en_US |
dc.date.accessioned | 2014-12-16T06:11:56Z | - |
dc.date.available | 2014-12-16T06:11:56Z | - |
dc.date.issued | 2013-05-01 | en_US |
dc.identifier.govdoc | H01L021/3065 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103284 | - |
dc.description.abstract | 本發明揭露一種含氮化合物半導體層缺陷之處理方法,包含以下的步驟:提供一基板;一含氮化合物半導體層形成於基板上,於含氮化合物半導體層具有貫穿式線缺陷;以及利用蝕刻氣體以執行蝕刻步驟以移除在含氮化合物半導體層之貫穿式線缺陷,使得含氮化合物半導體層無任何貫穿式線缺陷的產生,以提升元件之效能。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 含氮化合物半導體層缺陷之處理方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 201318058 | zh_TW |
Appears in Collections: | Patents |
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