Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 莊景德 | en_US |
| dc.contributor.author | 陳盈年 | en_US |
| dc.contributor.author | 謝建宇 | en_US |
| dc.contributor.author | 范銘隆 | en_US |
| dc.contributor.author | 胡璧合 | en_US |
| dc.contributor.author | 蘇彬 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:56Z | - |
| dc.date.available | 2014-12-16T06:11:56Z | - |
| dc.date.issued | 2013-05-01 | en_US |
| dc.identifier.govdoc | G11C011/412 | zh_TW |
| dc.identifier.govdoc | G11C011/417 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103285 | - |
| dc.description.abstract | 本發明提供一種靜態隨機存取記憶體，為七顆鰭狀電晶體架構，其使用獨立閘極超高臨界電壓的鰭狀場效電晶體，達到類似堆疊性質以消除讀取干擾以及半選取干擾，同時使用保持電路和讀取電壓控制，來降低讀取時位元線上的漏電流。再者，能有效解決先前技術使用六顆電晶體的SRAM架構，操作於較低電壓下，容易發生讀取錯誤的問題。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 獨立閘極控制靜態隨機存取記憶體 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201317991 | zh_TW |
| Appears in Collections: | Patents | |
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