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dc.contributor.author張原銘en_US
dc.contributor.author莊振益en_US
dc.contributor.author戴鴻名en_US
dc.contributor.author王浩偉en_US
dc.contributor.author曾文綬en_US
dc.contributor.author高斌栩en_US
dc.contributor.author張樂融en_US
dc.date.accessioned2014-12-16T06:11:57Z-
dc.date.available2014-12-16T06:11:57Z-
dc.date.issued2013-04-16en_US
dc.identifier.govdocB82B003/00zh_TW
dc.identifier.govdocB82Y040/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103294-
dc.description.abstract一種自組式金屬奈米島陣列之製作方法,係藉由在一半導體基材上進行一濺鍍製程,以形成一金屬奈米島陣列。利用此種製作方法,僅需單一濺鍍製程,即可完成金屬奈米島陣列的製作,相較於習知,不僅可有效減少繁瑣之製程步驟,更可進一步地節約能源、電力及製作成本。zh_TW
dc.language.isozh_TWen_US
dc.title自組式金屬奈米島陣列之製作方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201315674zh_TW
Appears in Collections:Patents


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