Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 唐士軒 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:58Z | - |
| dc.date.available | 2014-12-16T06:11:58Z | - |
| dc.date.issued | 2013-03-01 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103308 | - |
| dc.description.abstract | 一種在矽晶片上成長之高載子遷移率電晶體結構及其方法,特別用於半導體產業之半導體元件製程,其係利用超真空化學氣相沉積在矽基板上成長一層鍺磊晶層,在於其上成長變形電子遷移率電晶體結構,在此結構中,鍺磊晶層之功用為防止矽晶片在使用有機金屬化學氣相沉積(MOCVD)成長變形電子遷移率電晶體結構(MHEMT)時產生氧化物而影響電晶體元件結構的特性,其後藉由變形的結構以阻擋成長鍺磊晶層於矽晶片上時所產生的差排及缺陷,以達到降低元件厚度及減少製作成本之功效。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 一種在矽晶片上成長之高載子遷移率電晶體結構及其方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201310636 | zh_TW |
| Appears in Collections: | Patents | |
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