Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | 謝易叡 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:08Z | - |
| dc.date.available | 2014-12-16T06:12:08Z | - |
| dc.date.issued | 2012-06-01 | en_US |
| dc.identifier.govdoc | H01L027/092 | zh_TW |
| dc.identifier.govdoc | H01L021/8238 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103445 | - |
| dc.description.abstract | 本發明提出一種使用無源極、汲極接面之場效電晶體之基本互補式邏輯閘之構造及其製造方法，於半導體晶圓(wafer)上，形成無源極和汲極接面之N通道電晶體及無源極和汲極接面之P通道電晶體，在電晶體間以導電之連接結構互相連接，形成基本互補式邏輯閘(如inverter, NAND, NOR等邏輯閘)。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 使用無源極和汲極接面場效電晶體之基本互補式邏輯閘之構造及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201222785 | zh_TW |
| Appears in Collections: | Patents | |
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