Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 余沛慈 | en_US |
| dc.contributor.author | 陳炳茂 | en_US |
| dc.contributor.author | 張家華 | en_US |
| dc.contributor.author | 徐敏翔 | en_US |
| dc.contributor.author | 黃展宏 | en_US |
| dc.contributor.author | 郭振豪 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:10Z | - |
| dc.date.available | 2014-12-16T06:12:10Z | - |
| dc.date.issued | 2012-03-16 | en_US |
| dc.identifier.govdoc | G01N027/26 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103484 | - |
| dc.description.abstract | 本發明主要提供一種離子感測元件，包含有一可導電基底結構；以及複數凸設在該可導電基底結構上且與該可導電基底結構電性連接之離子感測奈米柱。每一離子感測奈米柱具有一離子敏感性外表面。該離子敏感性外表面具離子選擇性而可在待測溶液中選擇性地吸附待測離子以產生一對應於該待測離子濃度的表面電位能。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 離子感測元件 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201211529 | zh_TW |
| Appears in Collections: | Patents | |
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