標題: On-chip ESD protection design for automotive vacuum-fluorescent-display (VFD) driver IC to sustain high ESD stress
作者: Ker, Ming-Dou
Chang, Wei-Jen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: electrostatic discharge (ESD);high-voltage p-type silicon-controlled rectifier (HVPSCR);human body model (HBM);machine model (MM);secondary breakdown current (It2);vacuum fluorescent display (VFD)
公開日期: 1-九月-2007
摘要: A new electrostatic discharge (ESD) protection structure of high-voltage p-type silicon-controlled rectifier (HVPSCR) that is embedded into a high-voltage p-channel MOS (HVPMOS) device is proposed. to greatly improve the ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional n+ diffusion into the drain region of HVPMOS, the transmission-line-pulsing-measured secondary breakdown current of the output driver has been greatly improved to be greater than 6 A in a 0.5-mu m high-voltage complementary MOS process. Such ESD-enhanced VFD driver IC, which can sustain human-body-model ESD stress of up to 8 W, has been in mass production for automotive applications in cars without the latchup problem. Moreover, with device widths of 500, 600, and 800 mu m, the machine-model ESD levels of the HVPSCR are as high as 1100, 1300, and 1900 V, respectively.
URI: http://dx.doi.org/10.1109/TDMR.2007.907423
http://hdl.handle.net/11536/10354
ISSN: 1530-4388
DOI: 10.1109/TDMR.2007.907423
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 7
Issue: 3
起始頁: 438
結束頁: 445
顯示於類別:期刊論文


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