標題: | On-chip ESD protection design for automotive vacuum-fluorescent-display (VFD) driver IC to sustain high ESD stress |
作者: | Ker, Ming-Dou Chang, Wei-Jen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | electrostatic discharge (ESD);high-voltage p-type silicon-controlled rectifier (HVPSCR);human body model (HBM);machine model (MM);secondary breakdown current (It2);vacuum fluorescent display (VFD) |
公開日期: | 1-九月-2007 |
摘要: | A new electrostatic discharge (ESD) protection structure of high-voltage p-type silicon-controlled rectifier (HVPSCR) that is embedded into a high-voltage p-channel MOS (HVPMOS) device is proposed. to greatly improve the ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional n+ diffusion into the drain region of HVPMOS, the transmission-line-pulsing-measured secondary breakdown current of the output driver has been greatly improved to be greater than 6 A in a 0.5-mu m high-voltage complementary MOS process. Such ESD-enhanced VFD driver IC, which can sustain human-body-model ESD stress of up to 8 W, has been in mass production for automotive applications in cars without the latchup problem. Moreover, with device widths of 500, 600, and 800 mu m, the machine-model ESD levels of the HVPSCR are as high as 1100, 1300, and 1900 V, respectively. |
URI: | http://dx.doi.org/10.1109/TDMR.2007.907423 http://hdl.handle.net/11536/10354 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2007.907423 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 7 |
Issue: | 3 |
起始頁: | 438 |
結束頁: | 445 |
顯示於類別: | 期刊論文 |