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dc.contributor.author張立en_US
dc.contributor.author何焱騰en_US
dc.date.accessioned2014-12-16T06:12:25Z-
dc.date.available2014-12-16T06:12:25Z-
dc.date.issued2011-04-01en_US
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocC30B029/16zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103623-
dc.description.abstract本發明係有關於一種以單晶氧化物作為基板成長非極性m面磊晶層之方法,包括:提供一具有鈣鈦礦結構之單晶氧化物;選擇該單晶氧化物之一平面作為一基板;以及在該基板上以氣相沉積法生長一具有纖鋅礦結構半導體之非極性m面磊晶層。本發明亦提供一種以前述方法成長之具有非極性m面之磊晶層。zh_TW
dc.language.isozh_TWen_US
dc.title以單晶氧化物作為基板成長纖鋅礦結構半導體非極性m面磊晶層之方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201112311zh_TW
Appears in Collections:Patents


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