Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 呂宗育 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:27Z | - |
| dc.date.available | 2014-12-16T06:12:27Z | - |
| dc.date.issued | 2011-03-16 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L029/812 | zh_TW |
| dc.identifier.govdoc | H01L021/334 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103632 | - |
| dc.description.abstract | 提供一種具有高氮含量氮化鎢蕭特基閘極接觸之HEMT氮化鎵電晶體，在基底上依序具有氮化鎵層、氮化鋁鎵層、蕭特基閘極以及位於閘極兩側之源極與汲極。其中蕭特基閘極的材料為氮莫耳百分比為0.5之氮化鎢。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具有高氮含量氮化鎢蕭特基閘極接觸之ＨＥＭＴ氮化鎵電晶體及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201110344 | zh_TW |
| Appears in Collections: | Patents | |
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