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dc.contributor.author李威儀en_US
dc.contributor.author黃信雄en_US
dc.contributor.author陳奎銘en_US
dc.contributor.author葉彥顯en_US
dc.date.accessioned2014-12-16T06:12:37Z-
dc.date.available2014-12-16T06:12:37Z-
dc.date.issued2010-10-16en_US
dc.identifier.govdocH01L021/318zh_TW
dc.identifier.govdocC30B029/38zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103685-
dc.description.abstract一種成長III-V族氮化物薄膜之方法及其結構,其係利用氫化物蒸氣相磊晶方法來進行。此方法至少包含在介於900℃至950℃間之第一成長溫度,且以每分鐘0.5℃至10℃之一升溫速度,緩慢地於基板上磊晶成長一升溫氮化物層,直至溫度升溫至介於1000℃至1050℃間之第二成長溫度。本發明之升溫氮化物層,其晶格品質會隨著膜層高度而緩慢變化,因而能消除藍寶石基板與氮化鎵層之間因晶格不匹配而造成的應力。zh_TW
dc.language.isozh_TWen_US
dc.title一種成長III-V族氮化物薄膜之方法及其結構zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201037766zh_TW
Appears in Collections:Patents


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