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dc.contributor.author張翼en_US
dc.contributor.author張家達en_US
dc.contributor.author蕭世匡en_US
dc.date.accessioned2014-12-16T06:12:41Z-
dc.date.available2014-12-16T06:12:41Z-
dc.date.issued2010-07-01en_US
dc.identifier.govdocH01L021/027zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103721-
dc.description.abstract本發明揭露一種以光阻熱回流處理技術於半導體基板上形成圖形的方法,藉由改善黃光微影技術,使用乾式蝕刻方法蝕刻出具有特定傾斜角度,具有平滑的蝕刻輪廓,具有均勻且具有高密度與高蝕刻深、寬之圖形化半導體基板。且以控制光阻熱回流技術之時間,可形成不同的圖形及間距,以達到半導體基板上之極小線寬的目的。zh_TW
dc.language.isozh_TWen_US
dc.title以光阻熱回流處理技術於半導體基板上形成圖形的方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201025417zh_TW
Appears in Collections:Patents


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