Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 林鴻志 | en_US |
| dc.contributor.author | 蘇俊榮 | en_US |
| dc.contributor.author | 徐行徽 | en_US |
| dc.contributor.author | 李冠樟 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:45Z | - |
| dc.date.available | 2014-12-16T06:12:45Z | - |
| dc.date.issued | 2010-05-01 | en_US |
| dc.identifier.govdoc | H01L021/336 | zh_TW |
| dc.identifier.govdoc | H01L029/772 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103754 | - |
| dc.description.abstract | 一種具懸浮式奈米通道之電晶體結構與其製造方法，其包含有一基底；一位於基底上的側閘極；一覆蓋於基底與側閘極上的介電層；一位於側閘極之側邊的懸浮式奈米線通道，其與介電層間具有一氣隙；以及一源極電極與一汲極電極，其係設置於介電層上且分設於懸浮式奈米線通道的兩端。藉由側閘極之靜電力對懸浮式奈米線通道之吸附或分離，來達到快速改變等效側閘極介電層厚度，而使元件在開關狀態上快速切換或改變通道之起始電壓。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 具懸浮式奈米通道之電晶體結構與其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201017769 | zh_TW |
| Appears in Collections: | Patents | |
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