Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張家華 | en_US |
| dc.contributor.author | 楊勁生 | en_US |
| dc.contributor.author | 邱清華 | en_US |
| dc.contributor.author | 余沛慈 | en_US |
| dc.contributor.author | 郭浩中 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:47Z | - |
| dc.date.available | 2014-12-16T06:12:47Z | - |
| dc.date.issued | 2010-02-16 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L031/18 | zh_TW |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103789 | - |
| dc.description.abstract | 本發明提出了一種利用斜向沈積技術形成之透明導電氧化物奈米結構及其方法。該方法使用電子槍來蒸鍍靶材,其蒸鍍基板設置在多個可轉動傾斜的平板上,並具有氣體控制閥控制氣體的通入,及一加熱源控制腔體內溫度,並於蒸鍍後進行退火製程,以改善薄膜結構與光電性質。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 利用斜向沈積形成之奈米結構薄膜及其方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201007818 | zh_TW |
| Appears in Collections: | Patents | |
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