Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | 楊宗熺 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:48Z | - |
| dc.date.available | 2014-12-16T06:12:48Z | - |
| dc.date.issued | 2009-11-16 | en_US |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103810 | - |
| dc.description.abstract | 本發明係提供一種發光二極體（LED）結構，該發光二極體係包含一四族半導體構成之基板，一AlN成核層，形成於該四族基板上，一GaN磊晶層，形成於該AlN成核層上，一分散式布拉格反射鏡（DBR）多層結構，形成於該圖型化之GaN磊晶層上，以及一LED作用層結構，形成於該DBR多層結構上。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 發光二極體結構及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200947750 | zh_TW |
| Appears in Collections: | Patents | |
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