Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | 楊宗 | en_US |
| dc.contributor.author | 沈詩國 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:56Z | - |
| dc.date.available | 2014-12-16T06:12:56Z | - |
| dc.date.issued | 2009-04-16 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | H01L051/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103898 | - |
| dc.description.abstract | 本發明為一種於半導體基板上形成三族氮化物半導體層的方法。首先,提供一半導體基板,其半導體基板上具有一清潔表面;再形成一氮化鎵奈米柱緩衝層;覆蓋成長形成一氮化鎵磊晶層於氮化鎵奈米柱緩衝層上,藉以形成三族氮化物半導體層於半導體基板上。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 於半導體基板上形成三族氮化物半導體層的方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200917337 | zh_TW |
| Appears in Collections: | Patents | |
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