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dc.contributor.author張俊彥en_US
dc.contributor.author楊宗en_US
dc.contributor.author張哲榮en_US
dc.contributor.author辜瑞泰en_US
dc.contributor.author沈詩國en_US
dc.contributor.author陳怡誠en_US
dc.date.accessioned2014-12-16T06:12:57Z-
dc.date.available2014-12-16T06:12:57Z-
dc.date.issued2009-02-16en_US
dc.identifier.govdocC30B029/38zh_TW
dc.identifier.govdocC30B025/18zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103916-
dc.description.abstract本發明為一種於矽基板上形成三族氮化物半導體磊晶層的方法,首先以氫氟酸溶液去除矽基板氧化物,再以高溫去除氟離子及污染物,產生平坦及重構之矽表面。接著以低溫沉積鋁原子層於矽基板上。在適當條件下,利用低射頻功率、低溫梯度變化等單一步驟同時形成單晶氮化矽絕緣層及氮化鋁成核層。且在富含鎵的條件下,以高溫成長氮化鎵層。zh_TW
dc.language.isozh_TWen_US
dc.title於矽基板上形成三族氮化物半導體磊晶層的方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200907124zh_TW
Appears in Collections:Patents


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