Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | 楊宗 | en_US |
| dc.contributor.author | 張哲榮 | en_US |
| dc.contributor.author | 辜瑞泰 | en_US |
| dc.contributor.author | 沈詩國 | en_US |
| dc.contributor.author | 陳怡誠 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:57Z | - |
| dc.date.available | 2014-12-16T06:12:57Z | - |
| dc.date.issued | 2009-02-16 | en_US |
| dc.identifier.govdoc | C30B029/38 | zh_TW |
| dc.identifier.govdoc | C30B025/18 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103916 | - |
| dc.description.abstract | 本發明為一種於矽基板上形成三族氮化物半導體磊晶層的方法,首先以氫氟酸溶液去除矽基板氧化物,再以高溫去除氟離子及污染物,產生平坦及重構之矽表面。接著以低溫沉積鋁原子層於矽基板上。在適當條件下,利用低射頻功率、低溫梯度變化等單一步驟同時形成單晶氮化矽絕緣層及氮化鋁成核層。且在富含鎵的條件下,以高溫成長氮化鎵層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 於矽基板上形成三族氮化物半導體磊晶層的方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200907124 | zh_TW |
| Appears in Collections: | Patents | |
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