Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 李威儀 | en_US |
| dc.contributor.author | 黃信雄 | en_US |
| dc.contributor.author | 曾虹諭 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:58Z | - |
| dc.date.available | 2014-12-16T06:12:58Z | - |
| dc.date.issued | 2008-11-01 | en_US |
| dc.identifier.govdoc | H01L021/306 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103939 | - |
| dc.description.abstract | 本發明於氮化鎵層上形成介電層,利用曝光以及顯影蝕刻製程使該介電層形成條狀或點狀之圖形,並以該介電層作為後續氮化鎵層進行側向成長(Epitaxy Lateral Overgrowth)之遮罩,在氮化鎵層上方長成氮化鎵厚膜,接著以濕蝕刻方式將介電層移除,並蝕刻介電層上方之氮化鎵厚膜,以形成所需之特定形狀。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 一種於氮化物半導體進行蝕刻的方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200842967 | zh_TW |
| Appears in Collections: | Patents | |
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