Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張國明 | en_US |
| dc.contributor.author | 林稔杰 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:59Z | - |
| dc.date.available | 2014-12-16T06:12:59Z | - |
| dc.date.issued | 2008-09-16 | en_US |
| dc.identifier.govdoc | H01L021/66 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103955 | - |
| dc.description.abstract | 本發明揭露一種以半導體製程形成輻射熱測定儀元件的結構及方法。本發明利用簡單的製程步驟,以及溫度低於攝氏400度的互補式金氧半導體(Complementary Metal Oxide Semiconductor,CMOS)製程相容技術來實現具有高積集因子(Fill Factor)、高良率以及低製作成本的室溫輻射熱測定儀陣列,同時兼顧元件的整體熱特性表現,以及元件結構的完整性。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以半導體製程形成輻射熱測定儀元件的結構及方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200837861 | zh_TW |
| Appears in Collections: | Patents | |
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