Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 冉曉雯 | en_US |
| dc.contributor.author | 周政偉 | en_US |
| dc.contributor.author | 黃振昌 | en_US |
| dc.contributor.author | 顏國錫 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:01Z | - |
| dc.date.available | 2014-12-16T06:13:01Z | - |
| dc.date.issued | 2008-08-01 | en_US |
| dc.identifier.govdoc | H01L029/786 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103969 | - |
| dc.description.abstract | 一種晶粒控制及自我對準之複晶矽薄膜電晶體製造方法,係利用儲熱島高熱容、低傳導係數的特性,延長矽晶粒的成長時間以及控制成核位置,並利用其不透光的性質,當作自我對準閘極之罩幕,節省額外的光罩費用,還可以抑制薄膜電晶體平面顯示器因背光源照射電晶體通道區所引起之光漏電效應;另外,閘極可作為自我對準離子佈植源/汲極之罩幕。因此能夠達到提高電晶體工作效能、縮短製程以及節省製造成本之效。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 晶粒控制及自我對準之複晶矽薄膜電晶體製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200832713 | zh_TW |
| Appears in Collections: | Patents | |
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