Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 曾俊元 | en_US |
| dc.contributor.author | 李佳穎 | en_US |
| dc.contributor.author | 李思毅 | en_US |
| dc.contributor.author | 林鵬 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:07Z | - |
| dc.date.available | 2014-12-16T06:13:07Z | - |
| dc.date.issued | 2008-01-01 | en_US |
| dc.identifier.govdoc | H01J029/02 | zh_TW |
| dc.identifier.govdoc | C23C016/26 | zh_TW |
| dc.identifier.govdoc | C23C016/513 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104025 | - |
| dc.description.abstract | 本發明關於低溫下製備具有高長寬比之氧化鋅奈米棒之方法,其可與半導體製程進行整合,可獲得一具有閘極控制之三極場發射元件。該方法主要包括:提供一具有經過定義元件區域之半導體基板;於該經過定義元件區域上分別沉積一介電層及一導電層;於該介電層及導電層上定義出發射體陣列所在位置;以水熱法成長氧化鋅奈米棒於該發射體陣列;及以濕蝕刻法除去非發射體陣列所在位置之部分而獲得閘極控制場發射三極元件。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 閘極控制場發射三極元件及該元件之製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200802485 | zh_TW |
| Appears in Collections: | Patents | |
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